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STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications

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STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications

Brand Name : ST

Model Number : STP12NM50

Certification : ROHS

Place of Origin : Morocco

MOQ : 10PCS

Price : NEGOTIABLE

Payment Terms : T/T, Western Union

Supply Ability : 3000PCS/WEEK

Delivery Time : 2-3DAYS

Packaging Details : 1000PCS/TUBE

Technology : Si

Mounting Style : Through Hole

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 500 V

Id - Continuous Drain Current : 12 A

Rds On - Drain-Source Resistance : 350 mOhms

Vgs - Gate-Source Voltage : - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage : 3 V

Qg - Gate Charge : 39 nC

Minimum Operating Temperature : - 65 C

Maximum Operating Temperature : + 150 C

Pd - Power Dissipation : 160 W

Channel Mode : Enhancement

Configuration : Single

Forward Transconductance - Min : 5.5 S

Height : 9.15 mm

Length : 10.4 mm

Width : 4.6 mm

Rise Time : 10 ns

Typical Turn-On Delay Time : 20 ns

Factory packing quantity : 1000

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STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications

1.Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market

3.Applications
Switching applications

STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications

STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications Images

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